Abstract: 

Ever since the demonstration of first silicon transistor, dating back to the 1950s, Silicon microelectronics industry change the life style of human being dramatically by introducing variety of intelligent, faster, smaller electronics applications for lower cost. However the evolution of this industry is damped by the operating speed limitation due to electric interconnects, charge transportation problems and thermal limitations. An alternative but promising technology is to harness the existing silicon processing knowledge and use photons as information
carriers. Today's advancement of silicon-on-insulator (SOI) technology for signal processing, make silicon a potential contender for fully-integrated optoelectronic applications.

High refractive index contrast of SOI waveguide leads to high optical confinement and smaller effective mode area. This creates several strong nonlinear phenomena that effect the propagation of the optical signal through the silicon waveguides. Analyzing the propagation of optical
signal in silicon waveguide analytically is so difficult due to the complexity of the nonlinear phenomena and experimentally investigation is costly. Accurate modeling and numerical analysis would be an effective avenue for obtain insight of silicon photonics. To aid this problem, we develop a detail mathematical model to analyze such system using finite difference time domain (FDTD) numerical technique.
About the Speaker:

Chethiya is a postgraduate research student with the department of Electrical and Computer Systems Engineering